The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Sep. 27, 2021
Applicant:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Inventors:
Charles Baudot, Lumbin, FR;
Sebastien Cremer, Sassenage, FR;
Nathalie Vulliet, Crolles, FR;
Denis Pellissier-Tanon, Grenoble, FR;
Assignee:
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/109 (2006.01); H01L 31/18 (2006.01); H01L 31/0232 (2014.01); H01L 31/028 (2006.01); H01L 31/105 (2006.01);
U.S. Cl.
CPC ...
H01L 31/109 (2013.01); H01L 31/028 (2013.01); H01L 31/02327 (2013.01); H01L 31/105 (2013.01); H01L 31/1804 (2013.01);
Abstract
A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.