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For the Inventor, By the Inventor

Meridian, ID, United States of America

David S Pratt

LinkedIn
USPTO Granted Patents = 40 

Average Co-Inventor Count = 1.4

ph-index = 6

Forward Citations = 223(Granted Patents)


Location History:

  • Cooperstown, NY (US) (1981)
  • Meridian, ID (US) (2009 - 2024)

Company Filing History:

goldMedal35 out of 37,905 
 
Micron Technology Incorporated
 patents
silverMedal4 out of 2,305 
 
Nan Ya Technology Corporation
 patents
bronzeMedal1 out of 832,680 
Other
 patents

Years Active: 1981-2025

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40 patents (USPTO):
1. 12387981 - Methods for forming conductive vias, and associated devices and systems (2025-08-12),
2. 11990370 - Methods for forming conductive vias, and associated devices and systems (2024-05-21),
3. 11784077 - Wafer overlay marks, overlay measurement systems, and related methods (2023-10-10),
4. 11574842 - Methods for forming conductive vias, and associated devices and systems (2023-02-07),
5. 11515204 - Methods for forming conductive vias, and associated devices and systems (2022-11-29),
6. 10020287 - Pass-through interconnect structure for microelectronic dies and associated systems and methods (2018-07-10),
7. 9842806 - Stacked semiconductor devices (2017-12-12),
8. 9711457 - Semiconductor devices with recessed interconnects (2017-07-18),
9. 9595504 - Methods and systems for releasably attaching support members to microfeature workpieces (2017-03-14),
10. 9418970 - Redistribution layers for microfeature workpieces, and associated systems and methods (2016-08-16),
11. 9355934 - Method and apparatus providing integrated circuit having redistribution layer with recessed connectors (2016-05-31),
12. 9324721 - Pitch-halving integrated circuit process (2016-04-26),
13. 9245844 - Pitch-halving integrated circuit process and integrated circuit structure made thereby (2016-01-26),
14. 9230859 - Redistribution layers for microfeature workpieces, and associated systems and methods (2016-01-05),
15. 9209166 - Semiconductor assemblies, stacked semiconductor devices, and methods of manufacturing semiconductor assemblies and stacked semiconductor devices (2015-12-08),

Title: The Innovative Journey of David S Pratt

Introduction: David S Pratt, a talented inventor hailing from Meridian, ID (US), has made significant contributions to the world of innovation with his creative ideas and groundbreaking inventions.

Latest Patents: David S Pratt's latest patents showcase his commitment to pushing the boundaries of technology and design, with a focus on improving everyday life through innovative solutions.

Career Highlights: Throughout his illustrious career, David S Pratt has demonstrated a keen ability to identify gaps in the market and develop unique inventions to address them. His passion for innovation has led to the creation of several groundbreaking products that have garnered international acclaim.

Collaborations: David S Pratt has collaborated with leading industry experts, researchers, and engineers to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many of his projects.

Conclusion: David S Pratt's relentless pursuit of innovation and his unwavering dedication to creating meaningful change have solidified his position as a respected inventor in the global innovation landscape. His work continues to inspire future generations of inventors to think outside the box and pursue their creative visions.

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