The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2018

Filed:

Dec. 04, 2015
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

David S. Pratt, Meridian, ID (US);

Kyle K. Kirby, Eagle, ID (US);

Dewali Ray, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/04 (2014.01); H01L 25/065 (2006.01); H01L 21/768 (2006.01); H01L 25/00 (2006.01); H01L 23/498 (2006.01); H01L 25/18 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/76898 (2013.01); H01L 23/49811 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 25/50 (2013.01); H01L 25/043 (2013.01); H01L 25/18 (2013.01); H01L 2224/05001 (2013.01); H01L 2224/051 (2013.01); H01L 2224/056 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/05026 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/16145 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06555 (2013.01); H01L 2924/01019 (2013.01);
Abstract

Pass-through interconnect structures for microelectronic dies and associated systems and methods are disclosed herein. In one embodiment, a microelectronic die assembly includes a support substrate, a first microelectronic die positioned at least partially over the support substrate, and a second microelectronic die positioned at least partially over the first die. The first die includes a semiconductor substrate, a conductive trace extending over a portion of the semiconductor substrate, a substrate pad between the trace and the portion of the semiconductor substrate, and a through-silicon via (TSV) extending through the trace, the substrate pad, and the portion of the semiconductor substrate. The second die is electrically coupled to the support substrate via a conductive path that includes the TSV.


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