The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Oct. 21, 2022
Micron Technology, Inc., Boise, ID (US);
Trupti D. Gawai, Boise, ID (US);
David S. Pratt, Meridian, ID (US);
Ahmed M. Elsied, Boise, ID (US);
David A. Kewley, Boise, ID (US);
Dale W. Collins, Boise, ID (US);
Raju Ahmed, Boise, ID (US);
Chelsea M. Jordan, Boise, ID (US);
Radhakrishna Kotti, Meridian, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods of manufacturing semiconductor devices, and associated systems and devices, are disclosed herein. In some embodiments, a method of manufacturing a semiconductor device includes forming an opening in an electrically insulative material at least partially over a first electrically conductive feature and a second electrically conductive feature. The method can further include forming a ring of electrically conductive material around a sidewall of the insulative material defining the opening, wherein the ring of electrically conductive material includes (a) a first via portion over the first electrically conductive feature, (b) a second via portion over the second electrically conductive feature, and (c) connecting portions extending between the first and second via portions. Finally, the method can include removing the connecting portions of the ring of electrically conductive material to electrically isolate the first via portion from the second via portion.