San Ramon, CA, United States of America

David Lawrence Hall

USPTO Granted Patents = 4 

Average Co-Inventor Count = 6.3

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • San Diego, CA (US) (2023)
  • San Ramon, CA (US) (2023 - 2024)

Company Filing History:


Years Active: 2023-2025

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4 patents (USPTO):Explore Patents

Title: David Lawrence Hall: Innovator in Nanotechnology and X-ray Detection

Introduction

David Lawrence Hall is a prominent inventor based in San Ramon, CA. He holds a total of 4 patents that showcase his contributions to the fields of nanotechnology and solid-state X-ray detection. His innovative work has significant implications for various technological advancements.

Latest Patents

One of Hall's latest patents is for "Silicon carbide nanoneedles and fabrication thereof." This invention includes an elongated carbon-containing pillar with specific dimensions and a method for its fabrication involving plasma and chemical etching techniques. Another notable patent is for a "High temporal resolution solid-state X-ray detection system." This system describes methods for detecting X-ray pulses with high temporal resolution using semiconductor technology, which enhances the efficiency of X-ray detection.

Career Highlights

Throughout his career, David Lawrence Hall has worked with esteemed organizations such as Lawrence Livermore National Security, LLC and the University of California. His experience in these institutions has allowed him to develop cutting-edge technologies that push the boundaries of current scientific understanding.

Collaborations

Hall has collaborated with notable individuals in his field, including Adam M Conway and Mihail Bora. These partnerships have contributed to the advancement of his research and innovations.

Conclusion

David Lawrence Hall's work in nanotechnology and X-ray detection exemplifies the spirit of innovation. His patents reflect a commitment to advancing technology and improving detection systems, making a lasting impact in his field.

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