The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2025

Filed:

Aug. 06, 2020
Applicant:

Lawrence Livermore National Security, Llc, Livermore, CA (US);

Inventors:

Clint D. Frye, Livermore, CA (US);

Mihail Bora, Livermore, CA (US);

Adam M. Conway, Livermore, CA (US);

Devin Joseph Funaro, Livermore, CA (US);

Paulius Vytautas Grivickas, Livermore, CA (US);

David L. Hall, San Ramon, CA (US);

Lars F. Voss, Livermore, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
A61M 37/00 (2006.01); B81B 1/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
A61M 37/0015 (2013.01); B81B 1/008 (2013.01); B81C 1/00531 (2013.01); A61M 2037/0023 (2013.01); A61M 2037/0053 (2013.01); B81B 2201/055 (2013.01);
Abstract

A product includes an elongated carbon-containing pillar having a bottom and a tip opposite the bottom. The width of the pillar measured 1 nm below the tip is less than 700 nm. A method includes masking a carbon-containing single crystal for defining masked regions and unmasked regions on the single crystal. The method also includes performing a plasma etch for removing portions of the unmasked regions of the single crystal, thereby defining a pillar in each unmasked region, and performing a chemical etch on the pillars at a temperature between 1200° C. and 1600° C. for selectively reducing a width of each pillar.


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