The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2023

Filed:

Feb. 13, 2018
Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Yu-Hwa Lo, San Diego, CA (US);

David Hall, San Diego, CA (US);

Yu-Hsin Liu, San Diego, CA (US);

Zihan Xu, La Jolla, CA (US);

Lujiang Yan, La Jolla, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/0376 (2006.01); H10K 30/10 (2023.01); H01L 31/0256 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1075 (2013.01); H01L 31/0376 (2013.01); H01L 31/03762 (2013.01); H01L 31/03765 (2013.01); H01L 51/4213 (2013.01); H01L 2031/0344 (2013.01);
Abstract

Methods, systems, and devices are disclosed for low noise and high efficiency photoelectric amplification based on cycling excitation process (CEP). In some aspects, a device for amplifying signals of light-induced photocurrent includes an anode connected to a positive terminal of a voltage source; a disordered material layer coupled to the anode, wherein the disordered material layer is structured to have a thickness of 100 nm or less; and a cathode coupled to the disordered material layer and connected to a negative terminal of the voltage source, in which the device is operable to amplify photoexcited carriers based on photon absorption to produce an external quantum efficiency of the device that is at least 100%.


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