The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Apr. 27, 2021
Lawrence Livermore National Security, Llc, Livermore, CA (US);
The Regents of the University of California, Oakland, CA (US);
David Lawrence Hall, San Ramon, CA (US);
Mihail Bora, Livermore, CA (US);
Adam Conway, Livermore, CA (US);
Philip Datte, Concord, CA (US);
Qinghui Shao, Fremont, CA (US);
Erik Lars Swanberg, Jr., Livermore, CA (US);
Clement Antoine Trosseille, San Ramon, CA (US);
Charles Edward Hunt, Davis, CA (US);
Lawrence Livermore National Security, LLC, Livermore, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
Devices, systems and methods for solid-state X-ray detection with high temporal resolution are described. An example method includes receiving an X-ray pulse in a semiconductor chip resulting in an electron cloud being formed in the semiconductor chip, applying a first set of voltages across a first plurality of drift cathode strips on a first side of the semiconductor chip and a second plurality of drift cathode strips on a second side of the semiconductor chip, applying a second set of voltages to across the first and the second plurality of drift cathode strips to form an electric field having a linear profile to cause the electron cloud to drift along the middle of the semiconductor chip, and activating a counter cathode on the second side and one or more readout anodes on the first side to collect the electron cloud after spreading in the middle section of the semiconductor chip.