Lawrence Livermore National Security, LLC

University of California

University of Illinois

David Lawrence Hall

Adam M Conway

Lars F Voss

Mihail Bora

Yu-Hwa Lo

Charles E Hunt

Qinghui Shao

Clint Frye

Erik Lars Swanberg, Jr

Paulius Vytautas Grivickas

Yu-Hsin Liu

Devin Joseph Funaro

Philip Datte

Clement Antoine Trosseille

Zihan Xu

Lujiang Yan

Karen Marie Dowling

Kexin Li

Shaloo Rakheja

A product includes an elongated carbon-containing pillar having a bottom and a tip opposite the bottom. The width of the pillar measured 1 nm below the tip is less than 700 nm. A method includes masking a carbon-containing single crystal for defining masked regions and unmasked regions on the single crystal. The method also includes performing a plasma etch for removing portions of the unmasked regions of the single crystal, thereby defining a pillar in each unmasked region, and performing a chemical etch on the pillars at a temperature between 1200° C. and 1600° C. for selectively reducing a width of each pillar.

Silicon carbide nanoneedles and fabrication thereof

Devices, systems and methods for solid-state X-ray detection with high temporal resolution are described. An example method includes receiving an X-ray pulse in a semiconductor chip resulting in an electron cloud being formed in the semiconductor chip, applying a first set of voltages across a first plurality of drift cathode strips on a first side of the semiconductor chip and a second plurality of drift cathode strips on a second side of the semiconductor chip, applying a second set of voltages to across the first and the second plurality of drift cathode strips to form an electric field having a linear profile to cause the electron cloud to drift along the middle of the semiconductor chip, and activating a counter cathode on the second side and one or more readout anodes on the first side to collect the electron cloud after spreading in the middle section of the semiconductor chip.

High temporal resolution solid-state X-ray detection system

A photoconductive switch that uses materials that support negative differential mobility, whose operation leverages the pulse compression of a charge could to generate the 'on' time of the pulse in combination with the speed of light to generate the 'off' time of the pulse, is described. In one example, a method of operating a photoconductive switch, which includes two electrodes and a light absorbing material positioned therebetween, includes selecting a value for one or more parameters comprising a voltage for generation of an electric field, a spot size of a laser pulse, a temporal pulse width of the laser pulse, or an intensity of the laser pulse, wherein the selected value(s) for the one or more parameters enable the switch to operate in a region where the light absorbing material exhibits negative differential mobility, and illuminating the light absorbing material with the laser pulse to generate a charge cloud within the light absorbing material.

Pulse compression photoconductive semiconductor switches

Methods, systems, and devices are disclosed for low noise and high efficiency photoelectric amplification based on cycling excitation process (CEP). In some aspects, a device for amplifying signals of light-induced photocurrent includes an anode connected to a positive terminal of a voltage source; a disordered material layer coupled to the anode, wherein the disordered material layer is structured to have a thickness of 100 nm or less; and a cathode coupled to the disordered material layer and connected to a negative terminal of the voltage source, in which the device is operable to amplify photoexcited carriers based on photon absorption to produce an external quantum efficiency of the device that is at least 100%.

Systems, devices and methods for amplification of signals based on a cycling excitation process in disordered materials

Growing community of inventors

San Ramon, CA, United States of America

David Lawrence Hall