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For the Inventor, By the Inventor

Houston, TX, United States of America

David J McElroy

USPTO Granted Patents = 68

Average Co-Inventor Count = 1.3

ph-index = 25

Forward Citations = 1,824(Granted Patents)


Inventors with similar research interests:


Location History:

  • Houston, TX (US) (1976 - 1990)
  • Rosenberg, TX (US) (1990 - 1994)
  • Lubbock, TX (US) (1991 - 1996)
  • Allen, TX (US) (1992 - 2000)

Company Filing History:

goldMedal68 out of 29,232 
 
Texas Instruments Corporation
 patents

Years Active: 1976-2000

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Areas of Expertise:
Nonvolatile Memory
EEPROM Technology
Floating-Gate Memory
Dynamic RAM Cells
Semiconductor Fabrication
Programmable Memory Devices
Capacitive Coupling
Avalanche Fuse Elements
Memory Array Design
Microprocessor Memory Systems
Fault Tolerant Memory
Charge Storage EPROM
68 patents (USPTO):Explore Patents
1. 6049483 - Nonvolatile memory device having program and/or erase voltage clamp (2000-04-11),
2. 5641701 - Method for fabricating a semiconductor device with laser programable (1997-06-24),
3. 5523249 - Method of making an EEPROM cell with separate erasing and programming (1996-06-04),
4. 5412603 - Method and circuitry for programming floating-gate memory cell using a (1995-05-02),
5. 5334550 - Method of producing a self-aligned window at recessed intersection of (1994-08-02),
6. 5313432 - Segmented, multiple-decoder memory array and method for programming a (1994-05-17),
7. 5313427 - EEPROM array with narrow margin of voltage thresholds after erase (1994-05-17),
8. 5287315 - Skewed reference to improve ones and zeros in EPROM arrays (1994-02-15),
9. 5177705 - Programming of an electrically-erasable, electrically-programmable, (1993-01-05),
10. 5173436 - Method of manufacturing an EEPROM with trench-isolated bitlines (1992-12-22),
11. 5155055 - Method of making an electrically-erasable, electrically-programmable (1992-10-13),
12. 5151760 - Integrated circuit with improved capacitive coupling (1992-09-29),
13. 5110753 - Cross-point contact-free floating-gate memory array with silicided (1992-05-05),
14. 5057446 - Method of making an EEPROM with improved capacitive coupling between (1991-10-15),
15. 5051795 - EEPROM with trench-isolated bitlines (1991-09-24),

Title: **David J McElroy: A Pioneer in Nonvolatile Memory Technology**

Introduction

David J McElroy, based in Houston, TX, is a prominent inventor with an impressive portfolio of 68 patents. His contributions to the field of semiconductor technology, particularly in nonvolatile memory devices, showcase his commitment to innovation and excellence. McElroy's work has significantly impacted the efficiency and reliability of memory storage solutions.

Latest Patents

Among his latest patents is a groundbreaking nonvolatile memory device featuring a program and/or erase voltage clamp. This invention focuses on circuits designed to apply programming and erase voltages to memory cells effectively. By preventing the reverse breakdown of p-n junctions within memory cells through a clamping p-n junction, his innovation ensures that the memory cells are safeguarded from adverse effects during operation.

Another notable patent by McElroy is a method for fabricating semiconductor devices using laser programming. This patent details a comprehensive procedure that includes forming fuses and conductive pads above a semiconductor substrate, followed by several precise steps such as depositing and etching cap oxide layers, performing electrical tests, and trimming fuses with a laser beam. This inventive approach streamlines the manufacturing process, enhancing the performance and reliability of semiconductor devices.

Career Highlights

David J McElroy has built an impressive career at Texas Instruments Corporation, where he has played a pivotal role in advancing semiconductor technology. His extensive experience and innovative mindset have enabled him to contribute to a variety of projects that push the boundaries of current technology and meet the evolving needs of the industry.

Collaborations

Working alongside distinguished colleagues Manzur Gill and Sung-Wei Lin, McElroy has successfully collaborated on numerous projects, fostering an environment of creativity and innovation. Together, this team has shared their expertise to develop cutting-edge solutions that have enhanced the capabilities of nonvolatile memory devices and semiconductor technology as a whole.

Conclusion

David J McElroy stands out as a leading inventor in the semiconductor industry, with a remarkable record of patents that underline his innovative contributions. His work at Texas Instruments Corporation has not only advanced the field of nonvolatile memory technology but has also paved the way for future developments. The collaborations with his talented colleagues further emphasize the importance of teamwork and shared knowledge in driving technological progress.

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