The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 1994

Filed:

May. 07, 1993
Applicant:
Inventors:

John F Schreck, Houston, TX (US);

Debra J Dolby, Sugarland, TX (US);

David J McElroy, Lubbock, TX (US);

Eddie H Breashears, Lubbock, TX (US);

John H MacPeak, Lubbock, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
365210 ; 365185 ; 36518909 ;
Abstract

A structure and method for improving the sense margin of nonvolatile memories is disclosed. An improvement to the sense margin of nonvolatile memories is accomplished by improving the margin both for 'ones' at low control gate voltage Vcc and for 'zeros' at high control gate voltage Vcc. Improvement in sensing at low control gate voltages Vcc is accomplished by skewing the sense amplifier response characteristics by forming the channel length of the reference memory cell to have a longer channel length than the memory cells of the array.


Find Patent Forward Citations

Loading…