The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 1994
Filed:
Sep. 20, 1991
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A nonvolatile memory has pairs of cells in which each cell includes a control gate, a floating gate and a source/drain diffusion. A first cell in each of the pairs is producible to have one value of floating-gate to diffusion capacitance. A second cell in each of the pairs is producible to have a second value of floating-gate to diffusion capacitance different from the first value. The memory includes a first circuit for applying a first erasing pulse to the control gates and the diffusions of the first cells of the pairs and includes a second circuit for applying a second erasing pulse to the control gates and the diffusions of the second cells of the pairs. The first erasing pulse is adjustable to have a different magnitude than the second erasing pulse in order to narrow the margin of erased threshold voltages and thereby compensate for misalignment.