The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 1995
Filed:
May. 06, 1994
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The drain-to-source voltage and current for programming a selected nonvolatile memory cell 10 are achieved efficiently by pumping the source 11 of a selected cell 11 to a voltage less than the voltage VSS at the reference-voltage terminal of the memory cell array while, at the same time, pumping the drain 12 of the selected cell 10 to a voltage greater than the voltage VCC, which may be 3 V, at the supply-voltage terminal of the memory cell array. The cell substrate W2 is pumped to a voltage close to the voltage of the source 11 and, optionally, below the voltage of the source 11. One or more simple charge-pump circuits convert the output of the voltage supply VCC to a source-drain voltage and current capable of programming the selected nonvolatile cell 10 by hot carrier injection.