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For the Inventor, By the Inventor

Houston, TX, United States of America

David A Baglee

This inventor holds 16 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 1986-1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David A Baglee. Retrieved from https://idiyas.com/inventor/david-a-baglee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 16

% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 9

Forward Citations = 288(Granted Patents)


Location History:

  • Albequerque, NM (US) (1991)
  • Houston, TX (US) (1986 - 1994)
  • Albuquerque, NM (US) (1997)

Company Filing History:

goldMedal16 out of 29,869 
 
Texas Instruments Corporation
 patents

Years Active: 1986-1997

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16 patents (USPTO):Explore Patents
1. 5681768 - Transistor having reduced hot carrier implantation (1997-10-28),
2. 5679968 - Transistor having reduced hot carrier implantation (1997-10-21),
3. 5374580 - Method of forming high density DRAM having increased capacitance area (1994-12-20),
4. 5170234 - High density dynamic RAM with trench capacitor (1992-12-08),
5. 5049958 - Stacked capacitors for VLSI semiconductor devices (1991-09-17),
6. 4975384 - Erasable electrically programmable read only memory cell using trench (1990-12-04),
7. 4975383 - Method for making an electrically erasable programmable read only memory (1990-12-04),
8. 4928267 - Method of reconditioning an electronically programmable memory device (1990-05-22),
9. 4891747 - Lightly-doped drain transistor structure in contactless DRAM cell with (1990-01-02),
10. 4835741 - Frasable electrically programmable read only memory cell using a three (1989-05-30),
11. 4830981 - Trench capacitor process for high density dynamic ram (1989-05-16),
12. 4796228 - Erasable electrically programmable read only memory cell using trench (1989-01-03),
13. 4721987 - Trench capacitor process for high density dynamic RAM (1988-01-26),
14. 4718041 - EEPROM memory having extended life (1988-01-05),
15. 4641173 - Integrated circuit load device (1987-02-03),

Title: David A. Baglee: Innovator in Semiconductor Technology

Introduction

David A. Baglee is a prominent inventor based in Houston, TX, who has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 16 patents, his work has paved the way for advancements in transistor design and functionality.

Latest Patents

One of Baglee's latest inventions is a patent for a transistor having reduced hot carrier implantation. This innovative transistor is formed on the outer surface of a semiconductor substrate and includes a source region and a drain region that define a channel region in between. It features a gate insulator layer that insulates a gate conductor from the channel region. A key aspect of this invention is the sidewall insulator body, which includes a thickened region of insulator that separates the gate conductor's end from the channel region near the drain. This configuration significantly reduces the local electric field in the channel region and minimizes the implantation of hot carriers into the gate insulator, enhancing the overall efficiency and longevity of the transistor.

Career Highlights

David A. Baglee has spent a considerable part of his career at Texas Instruments Corporation, where he has been at the forefront of innovative semiconductor solutions. His dedication to research and development has resulted in a substantial number of patents that demonstrate his prowess as an inventor in the industry.

Collaborations

Throughout his career, Baglee has collaborated with several talented professionals in the field, including Michael C. Smayling and Ronald N. Parker. These partnerships have fostered a rich environment for innovation and have contributed to the development of advanced technologies in semiconductor manufacturing.

Conclusion

In summary, David A. Baglee stands out as an influential inventor whose contributions to transistor technology have not only advanced the capabilities of semiconductors but have also positioned him as a leader in the field. His ongoing work and numerous patents continue to inspire future innovations and shape the landscape of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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