The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 1990
Filed:
Aug. 22, 1986
Applicant:
Inventor:
David A Baglee, Houston, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 236 ; 357 59 ; 357 45 ; 357 90 ; 357 53 ;
Abstract
A dynamic RAM cell of the contactless type with a buried N+ source/drain region is constructed by the metal-gate non-self-aligned technique. A lightly-doped drain is provided by employing both arsenic and phosphorus in the buried N+ region. The effects of impact ionization are thus minimized, and a high density cell array is provided.
Baglee, David. (1990). Lightly-doped drain transistor structure in contactless dram cell with (U.S. Patent No. 4891747). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4891747
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile