The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 1990
Filed:
Jul. 11, 1988
Applicant:
Inventor:
David A Baglee, Houston, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 43 ; 437 52 ;
Abstract
An electrically programmable read only memory cell formed in a face of a semiconductor substrate which includes a floating gate transistor having a floating gate and a control gate formed at least partially in a trench in the substrate. The trench has bottom corners sufficiently sharp so as to enhance the likelihood of tunnelling between corner regions of the trench and the floating gate over that between planar surface regions of the trench and floating gate.
Baglee, David. (1990). Erasable electrically programmable read only memory cell using trench (U.S. Patent No. 4975384). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4975384
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile