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For the Inventor, By the Inventor

Meridian, ID, United States of America

Daryl C New

USPTO Granted Patents = 19

Average Co-Inventor Count = 1.3

ph-index = 5

Forward Citations = 62(Granted Patents)


Location History:

  • Meridian, ID (US) (1997 - 2006)
  • Boise, ID (US) (1998 - 2009)

Company Filing History:

goldMedal19 out of 37,950 
 
Micron Technology Incorporated
 patents

Years Active: 1997-2009

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19 patents (USPTO):Explore Patents
1. 7625694 - Selective provision of a diblock copolymer material (2009-12-01),
2. 7037848 - Methods of etching insulative materials, of forming electrical devices, and of forming capacitors (2006-05-02),
3. 6753262 - Methods of etching insulative materials, of forming electrical devices, and of forming capacitors (2004-06-22),
4. 6586816 - Semiconductor structures formed using redeposition of an etchable layer (2003-07-01),
5. 6528429 - Methods of etching insulative materials, of forming electrical devices, and of forming capacitors (2003-03-04),
6. 6358857 - Methods of etching insulative materials, of forming electrical devices, and of forming capacitors (2002-03-19),
7. 6331442 - Pre-patterned contact fill capacitor for dielectric etch protection (2001-12-18),
8. 6297124 - Method of improving alignment signal strength by reducing refraction index at interface of materials in semiconductors (2001-10-02),
9. 6133108 - Dielectric etch protection using a pre-patterned via-fill capacitor (2000-10-17),
10. 6096571 - Method of improving alignment signal strength by reducing refraction (2000-08-01),
11. 6060785 - Method of improving alignment signal strength by reducing refraction (2000-05-09),
12. 6027860 - Method for forming a structure using redeposition of etchable layer (2000-02-22),
13. 5985676 - Method of forming capacitor while protecting dielectric from etchants (1999-11-16),
14. 5933743 - Method of improving alignment signal strength by reducing refraction (1999-08-03),
15. 5824590 - Method for oxidation and crystallization of ferroelectric material (1998-10-20),

Title: Daryl C. New: Innovator in Integrated Circuit Technologies

Introduction

Daryl C. New, based in Meridian, ID, has made significant contributions to the field of integrated circuit technologies through his innovative work and patents. With an impressive portfolio of 19 patents, he continues to push the boundaries of technological advancements within the semiconductor industry.

Latest Patents

Among his latest innovations, Daryl C. New has developed techniques for the selective provision of diblock copolymer materials, which are essential for the creation of small dots or holes in integrated circuit layers. This process involves depositing a diblock copolymer (DBCP) film on the circuit layer and confining it to define specific areas where hexagonal domains will be formed. By employing photolithographic techniques, Daryl ensures that the resulting domains will meet the desired specifications for etching. His other notable patents include methods for etching insulative materials that consist of metal and oxygen complexes, as well as innovative techniques for forming capacitors.

Career Highlights

Daryl has been an integral part of Micron Technology Incorporated, a leading company in memory and storage solutions. His work at Micron has been pivotal in advancing the performance and functionality of integrated circuits, showcasing his expertise as a talented inventor in the tech industry.

Collaborations

In his professional journey, Daryl C. New has worked alongside esteemed colleagues Thomas M. Graettinger and Brent A. McClure. Their collaborative efforts have contributed to significant innovations in semiconductor technology and have further enhanced the development of patented techniques within the field.

Conclusion

With a robust patent portfolio and a career dedicated to innovation, Daryl C. New stands out as a notable figure in the realm of integrated circuit development. His inventions not only enhance current technologies but also pave the way for future advancements in the semiconductor industry.

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