The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1998
Filed:
Jul. 23, 1996
Daryl C New, Meridian, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A two-step method of low temperature oxidation of a ferroelectric layer followed by high temperature crystallization of the ferroelectric film to protect underlying semiconductor layers against high temperature oxidation which can cause the conductive layers thereof to become nonconductive. The thus provides a barrier layer on a semiconductor wafer, depositing a ferroelectric layer on the barrier layer, heating the semiconductor wafer at a temperature in a range of about 400.degree. C. to about 700.degree. C. in the presence of oxygen to oxidize the ferroelectric layer, and then heating the semiconductor wafer at a temperature in a range of about 700.degree. C. to about 900.degree. C. in a non-oxidizing ambient to crystallize the oxidized, ferroelectric layer.