The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2000
Filed:
Jul. 10, 1998
Daryl C New, Meridian, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Disclosed is a capacitor incorporating a material having a high dielectric constant and a method of fabricating the same. In a preferred embodiment, the bottom electrode is first deposited and patterned. An insulating diffusion barrier, such as LPCVD silicon nitride, is deposited over the bottom electrode and a via is opened in the silicon nitride to expose the bottom electrode. This via is filled with the dielectric material. In a disclosed embodiment, the dielectric material is deposited in solution form and crystallized in a high-temperature step. A top conductive layer is deposited over the dielectric material, masked and etched to form the top conductive layer. This etch may simultaneously etch any portion of the dielectric layer overflowing the contact via.