Dae-jin Kwon

This inventor holds 12 USPTO granted patents and 1 published patent application. Top assignees: Samsung Electronics Co., Ltd., Genitech, Inc.. Active years: 2004-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dae-jin Kwon. Retrieved from https://idiyas.com/inventor/dae-jin-kwon-l2tuzjs6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12 (Patent Applications = 1)

% Patents Active = 66.7

Average Co-Inventor Count = 4.0

ph-index = 6

Forward Citations = 514(Granted Patents)

Location History:

Seongnam, KR (2004)
Kyungki-do, KR (2007)
Suwon-si, KR (2008 - 2017)

Company Filing History:

12 out of 132,108

Samsung Electronics Co., Ltd.

where one patent can have more than one assignee

Years Active: 2004-2017

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12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9702041 - Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus (2017-07-11),

2. 9406502 - Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus (2016-08-02),

3. 9029244 - Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus (2015-05-12),

4. 7732296 - Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the method (2010-06-08),

5. 7679124 - Analog capacitor and method of manufacturing the same (2010-03-16),

6. 7554146 - Metal-insulator-metal capacitor and method of fabricating the same (2009-06-30),

7. 7508649 - Multi-layered dielectric film of microelectronic device and method of manufacturing the same (2009-03-24),

8. 7491654 - [object Object] (2009-02-17),

9. 7442982 - Capacitor having reaction preventing layer and methods of forming the same (2008-10-28),

10. 7407897 - Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the same (2008-08-05),

11. 7297591 - Method for manufacturing capacitor of semiconductor device (2007-11-20),

12. 6835621 - Method of fabricating non-volatile memory device having a structure of silicon-oxide-nitride-oxide-silicon (2004-12-28),

Title: The Innovations of Dae-jin Kwon

Introduction

Dae-jin Kwon is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor device fabrication, holding a total of 12 patents. His work focuses on improving the efficiency and effectiveness of gas valve systems used in semiconductor manufacturing.

Latest Patents

Among his latest patents is an apparatus that includes a 4-way valve for fabricating semiconductor devices. This invention also encompasses a method of controlling the valve and a method of fabricating semiconductor devices using the apparatus. The apparatus is designed to enhance purge efficiency by preventing dead volume from occurring in the gas valve system. It features a reaction chamber where substrates are processed, a first processing gas supply pipe, and a 4-way valve that connects various gas supply lines to optimize the fabrication process.

Career Highlights

Dae-jin Kwon has worked with notable companies such as Samsung Electronics Co., Ltd. and Genitech, Inc. His experience in these organizations has allowed him to develop innovative solutions that address challenges in semiconductor manufacturing.

Collaborations

Throughout his career, Dae-jin Kwon has collaborated with talented individuals, including Seok-Jun Won and Weon-hong Kim. These partnerships have contributed to the advancement of his inventions and the overall progress in the semiconductor industry.

Conclusion

Dae-jin Kwon's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the efficiency of semiconductor device fabrication.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: