The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
May. 17, 2005
Seok-jun Won, Seoul, KR;
Dae-jin Kwon, Suwon-si, KR;
Seok-Jun Won, Seoul, KR;
Dae-Jin Kwon, Suwon-si, KR;
Abstract
The present invention is directed to a capacitor having a reaction preventing layer and a method forming the same. A lower electrode of silicon is formed on a substrate. An assistance layer of metal oxide or metal nitride is formed on the lower electrode. A nitridation process is performed to enable the silicon of the lower electrode, the assistance layer, and nitrogen supplied by the nitridation process to react with one another, forming a reaction preventing layer comprising metal silicon oxynitride or metal silicon nitride. A high-k dielectric film and an upper electrode are formed on the reaction preventing layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile