The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Jul. 13, 2006
Min-woo Song, Seongnam-si, KR;
Seok-jun Won, Seoul, KR;
Weon-hong Kim, Suwon-si, KR;
Dae-jin Kwon, Suwon-si, KR;
Jung-min Park, Yongin-si, KR;
Min-Woo Song, Seongnam-si, KR;
Seok-Jun Won, Seoul, KR;
Weon-Hong Kim, Suwon-si, KR;
Dae-Jin Kwon, Suwon-si, KR;
Jung-Min Park, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Example embodiments of the present invention relate to a method of forming a dielectric thin film and a method of fabricating a semiconductor memory device having the same. Other example embodiments of the present invention relate to a method of forming a ZrOthin film and a method of fabricating a capacitor of a semiconductor memory device using the ZrOthin film as a dielectric layer. A method of forming a ZrOthin film may include supplying a zirconium precursor on a substrate maintained at a desired temperature, thereby forming a chemisorption layer of the precursor on the substrate. The zirconium precursor may be a tris(N-ethyl-N-methylamino)(tert-butoxy) zirconium precursor. The substrate having the chemisorption layer of the precursor may be exposed to the plasma atmosphere of oxygen-containing gas for a desired time, thereby forming a Zr oxide layer on the substrate, and a method of fabricating a capacitor of a semiconductor memory device having the ZrOthin film.