The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2008
Filed:
Jul. 01, 2005
Seok-jun Won, Seoul, KR;
Yong-kuk Jeong, Seoul, KR;
Dae-jin Kwon, Suwon-si, KR;
Min-woo Song, Seongnam-si, KR;
Weon-hong Kim, Suwon-si, KR;
Seok-jun Won, Seoul, KR;
Yong-kuk Jeong, Seoul, KR;
Dae-jin Kwon, Suwon-si, KR;
Min-woo Song, Seongnam-si, KR;
Weon-hong Kim, Suwon-si, KR;
Abstract
In a capacitor of an analog semiconductor device having a multi-layer dielectric film and a method of manufacturing the same, the multi-layer dielectric film can be readily manufactured, has weak reactivity with corresponding electrodes and offers excellent leakage current characteristics. In order to obtain these advantages, a lower dielectric film having a negative quadratic VCC, an intermediate dielectric film having a positive quadratic VCC, and an upper dielectric film having a negative quadratic VCC are sequentially formed between a lower electrode and an upper electrode. The lower dielectric film and the upper dielectric film may be composed of SiO. The intermediate dielectric film may be composed of HFO.