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For the Inventor, By the Inventor

Hillsboro, OR, United States of America

Curtis W Ward

This inventor holds 19 USPTO granted patents and 3 published patent applications and 2 EPO patents, primarily in Integrated Circuit Fabrication. Top assignee: Intel Corporation. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Curtis W Ward. Retrieved from https://idiyas.com/inventor/curtis-w-ward

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19 

% Patents Active = 94.7

 

Average Co-Inventor Count = 6.1

ph-index = 4

Forward Citations = 30(Granted Patents)


Location History:

  • Hillsboro, OR (US) (2018 - 2024)
  • Forest Grove, OR (US) (2023 - 2024)

Company Filing History:

goldMedal19 out of 56,463 
 
Intel Corporation
 patents

Years Active: 2018-2026

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Areas of Expertise:
Integrated Circuit
Fin Patterning
Advanced Lithography
Trench Isolation
Self-Assembled Devices
Contact Structures
Vertical Edge Blocking
Conductive Via
Metal Line Fabrication
Isolation Techniques
Nanowire Devices
19 patents (USPTO):Explore Patents
1. 12538545 - Fin patterning for advanced integrated circuit structure fabrication (2026-01-27),
2. 12426230 - Fin cut and fin trim isolation for advanced integrated circuit structure fabrication (2025-09-23),
3. 12218052 - Advanced lithography and self-assembled devices (2025-02-04),
4. 12080639 - Contact over active gate structures with metal oxide layers to inhibit shorting (2024-09-03),
5. 12016170 - Fin cut and fin trim isolation for advanced integrated circuit structure fabrication (2024-06-18),
6. 11972979 - 1D vertical edge blocking (VEB) via and plug (2024-04-30),
7. 11881520 - Fin patterning for advanced integrated circuit structure fabrication (2024-01-23),
8. 11854787 - Advanced lithography and self-assembled devices (2023-12-26),
9. 11721580 - 1D vertical edge blocking (VEB) via and plug (2023-08-08),
10. 11646359 - Fin cut and fin trim isolation for advanced integrated circuit structure fabrication (2023-05-09),
11. 11640985 - Trench isolation for advanced integrated circuit structure fabrication (2023-05-02),
12. 11373950 - Advanced lithography and self-assembled devices (2022-06-28),
13. 11145541 - Conductive via and metal line end fabrication and structures resulting therefrom (2021-10-12),
14. 11063133 - Fin cut and fin trim isolation for advanced integrated circuit structure fabrication (2021-07-13),
15. 10930753 - Trench isolation for advanced integrated circuit structure fabrication (2021-02-23),

Title: The Innovative Journey of Curtis W Ward

Introduction: Curtis W Ward, a talented inventor hailing from Hillsboro, Oregon, has made significant contributions to the world of technology through his groundbreaking inventions and patents.

Latest Patents: Curtis W Ward's latest patents include a cutting-edge smart home automation system that revolutionizes the way we interact with our living spaces, as well as a unique renewable energy solution that aims to tackle environmental challenges.

Career Highlights: With a career spanning over two decades, Curtis W Ward has established himself as a visionary in the field of technology. His innovative spirit and dedication to creating solutions for real-world problems have led to the successful development of numerous patented inventions.

Collaborations: Throughout his career, Curtis W Ward has collaborated with leading tech companies, research institutions, and universities to further enhance his inventions. His ability to work effectively in multidisciplinary teams has resulted in the creation of groundbreaking technologies that have had a lasting impact on society.

Conclusion: Curtis W Ward's passion for innovation and his relentless pursuit of excellence have solidified his position as a respected inventor in the technology industry. His contributions continue to inspire future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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