The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2026

Filed:

Dec. 23, 2022
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Curtis Ward, Hillsboro, OR (US);

Heidi M. Meyer, Hillsboro, OR (US);

Michael L. Hattendorf, Portland, OR (US);

Christopher P. Auth, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10B 10/00 (2023.01); H10D 1/47 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01); H10D 62/00 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/822 (2025.01); H10D 62/834 (2025.01); H10D 64/23 (2025.01); H10D 64/68 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10D 84/85 (2025.01); H10D 89/10 (2025.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H10D 64/017 (2025.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/0337 (2013.01); H01L 21/28247 (2013.01); H01L 21/28518 (2013.01); H01L 21/28568 (2013.01); H01L 21/3086 (2013.01); H01L 21/31105 (2013.01); H01L 21/31144 (2013.01); H01L 21/76224 (2013.01); H01L 21/76232 (2013.01); H01L 21/76801 (2013.01); H01L 21/76802 (2013.01); H01L 21/76816 (2013.01); H01L 21/76834 (2013.01); H01L 21/76846 (2013.01); H01L 21/76849 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 23/5283 (2013.01); H01L 23/53209 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 23/5329 (2013.01); H10B 10/12 (2023.02); H10D 1/47 (2025.01); H10D 1/474 (2025.01); H10D 30/024 (2025.01); H10D 30/0245 (2025.01); H10D 30/62 (2025.01); H10D 30/6211 (2025.01); H10D 30/6213 (2025.01); H10D 30/6219 (2025.01); H10D 30/792 (2025.01); H10D 30/794 (2025.01); H10D 30/795 (2025.01); H10D 30/797 (2025.01); H10D 62/021 (2025.01); H10D 62/115 (2025.01); H10D 62/116 (2025.01); H10D 62/151 (2025.01); H10D 62/822 (2025.01); H10D 62/834 (2025.01); H10D 64/015 (2025.01); H10D 64/021 (2025.01); H10D 64/259 (2025.01); H10D 64/689 (2025.01); H10D 84/0151 (2025.01); H10D 84/0158 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/0172 (2025.01); H10D 84/0177 (2025.01); H10D 84/0181 (2025.01); H10D 84/0186 (2025.01); H10D 84/0188 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01); H10D 84/853 (2025.01); H10D 84/856 (2025.01); H10D 89/10 (2025.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/0332 (2013.01); H01L 21/76883 (2013.01); H01L 21/76885 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H10D 30/0212 (2025.01); H10D 30/6212 (2025.01); H10D 30/791 (2025.01); H10D 84/0135 (2025.01); H10D 84/0149 (2025.01);
Abstract

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first plurality of semiconductor fins having a longest dimension along a first direction. Adjacent individual semiconductor fins of the first plurality of semiconductor fins are spaced apart from one another by a first amount in a second direction orthogonal to the first direction. A second plurality of semiconductor fins has a longest dimension along the first direction. Adjacent individual semiconductor fins of the second plurality of semiconductor fins are spaced apart from one another by the first amount in the second direction, and closest semiconductor fins of the first plurality of semiconductor fins and the second plurality of semiconductor fins are spaced apart by a second amount in the second direction.


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