Chun-Lin Chen

Title: The Innovations of Chun-Lin Chen

Introduction

Chun-Lin Chen is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology. With a total of 3 patents, his work focuses on advanced transistor designs and fabrication methods.

Latest Patents

Chun-Lin Chen's latest patents include innovative technologies such as the EDMOS and fabricating method of the same. This extended drain metal oxide semiconductor transistor features a substrate with a gate disposed on it. The design includes a source doped region on one side of the gate and a drain doped region on the other. A thin gate dielectric layer is placed under the gate, while a thick gate dielectric layer extends from the bottom of the gate to contact the drain doped region. Additionally, a second conductive type first well surrounds both the source and drain doped regions, with a deep well surrounding the first well. Another significant patent involves a gate oxide forming process that outlines the steps for creating a gate oxide layer on a substrate.

Career Highlights

Chun-Lin Chen is currently employed at United Microelectronics Corporation, where he continues to push the boundaries of semiconductor innovation. His expertise in the field has led to advancements that are crucial for modern electronic devices.

Collaborations

Chun-Lin Chen has collaborated with talented coworkers such as Yuan-Cheng Yang and Yi-Han Su. Their combined efforts contribute to the innovative projects at United Microelectronics Corporation.

Conclusion

Chun-Lin Chen's work exemplifies the spirit of innovation in semiconductor technology. His patents and collaborations highlight his commitment to advancing the field.