The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Dec. 05, 2016
United Microelectronics Corporation, Hsinchu, TW;
Kun Ju Li, Tainan, TW;
Hsin Jung Liu, Kanding Township, TW;
Wei-Chuan Tsai, Hemei Township, TW;
Min-Chuan Tsai, New Taipei, TW;
Yi Han Liao, Taichung, TW;
Chun-Tsen Lu, Tainan, TW;
Chun-Lin Chen, Tainan, TW;
Jui-Ming Yang, Taichung, TW;
Kuo-Chin Hung, Puxin Township, TW;
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor structure, comprising: providing a preliminary structure having a first region and a second region and comprising a plurality of first trenches in the first region; forming a metal layer filling the first trenches covering on the preliminary structure, wherein the metal layer comprises a concave portion in the second region and the concave portion defines an opening; forming a metal nitride layer on the metal layer by an nitride treatment; and performing a planarization process to remove the metal nitride layer and a portion of the metal layer to expose the preliminary structure.