The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Oct. 30, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Yuan-Cheng Yang, Kaohsiung, TW;
Yi-Han Su, Pingtung County, TW;
Sheng-Chen Chung, Tainan, TW;
Chen-An Kuo, Taoyuan, TW;
Chun-Lin Chen, Tainan, TW;
Chiu-Te Lee, Hsinchu County, TW;
Chih-Chung Wang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A gate oxide forming process includes the following steps. A substrate including a first area and a second area is provided. A first oxide layer, a silicon containing cap layer and a second oxide layer on the substrate of the first area and the second area are sequentially and blanketly formed. The silicon containing cap layer and the second oxide layer in the first area are removed. An oxidation process is performed to oxidize the silicon containing cap layer and a gate oxide layer is formed in the second area.