Taipei, Taiwan

Chih-Cheng Fu



Average Co-Inventor Count = 4.3

ph-index = 2

Forward Citations = 9(Granted Patents)


Location History:

  • New Taipei, TW (2019 - 2023)
  • Taichung, TW (2019 - 2024)

Company Filing History:


Years Active: 2019-2025

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10 patents (USPTO):Explore Patents

Title: Chih-Cheng Fu: Innovator in Resistive Memory Technology

Introduction

Chih-Cheng Fu is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of memory technology, particularly in resistive memory apparatus. With a total of 10 patents to his name, Fu continues to push the boundaries of innovation in this area.

Latest Patents

One of his latest patents is focused on a resistive memory apparatus and its operating method. This invention includes a memory cell array, at least one dummy transistor, and a control circuit. The memory cell array consists of multiple memory cells, each containing a resistive switching element. The dummy transistor is electrically isolated from the resistive switching element, allowing for improved functionality. The control circuit is designed to provide various voltages to the dummy transistor, enabling it to output a saturation current. This innovation also includes an operating method and a memory cell array that enhances the performance of the resistive memory apparatus.

Career Highlights

Chih-Cheng Fu is currently employed at Winbond Electronics Corporation, where he continues to develop cutting-edge memory technologies. His work has been instrumental in advancing the capabilities of resistive memory systems, making them more efficient and reliable.

Collaborations

Fu has collaborated with notable colleagues, including Ping-Kun Wang and Frederick Chen. These partnerships have fostered a creative environment that encourages innovation and the development of new technologies.

Conclusion

Chih-Cheng Fu is a key figure in the field of resistive memory technology, with a strong portfolio of patents and a commitment to innovation. His contributions are shaping the future of memory systems, making them more effective and versatile.

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