The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Feb. 20, 2019
Applicant:
Winbond Electronics Corp., Taichung, TW;
Inventors:
Ping-Kun Wang, Taichung, TW;
Ming-Che Lin, Taichung, TW;
Chien-Min Wu, Taichung, TW;
He-Hsuan Chao, Taichung, TW;
Chih-Cheng Fu, Taichung, TW;
Shao-Ching Liao, Taichung, TW;
Assignee:
Winbond Electronics Corp., Taichung, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 29/50 (2006.01); G11C 29/02 (2006.01); G11C 29/24 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50016 (2013.01); G11C 13/004 (2013.01); G11C 13/0035 (2013.01); G11C 13/0038 (2013.01); G11C 29/021 (2013.01); G11C 29/24 (2013.01); G11C 2013/0045 (2013.01); G11C 2029/5004 (2013.01); G11C 2029/5006 (2013.01);
Abstract
A memory storage apparatus and a forming method of a resistive memory device thereof are provided. A test forming voltage is applied to a redundant resistive memory device and a corresponding test current is read. A forming voltage applied to a main memory cell block is determined according to the test forming voltage, the test current, a forming current-voltage characteristic data and a target forming current.