Taichung, Taiwan

He-Hsuan Chao


Average Co-Inventor Count = 5.6

ph-index = 1

Forward Citations = 9(Granted Patents)


Location History:

  • Hsinchu, TW (2020 - 2023)
  • Taichung, TW (2020 - 2024)

Company Filing History:


Years Active: 2020-2024

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12 patents (USPTO):Explore Patents

Title: He-Hsuan Chao: Innovator in Resistive Random Access Memory Technology

Introduction

He-Hsuan Chao is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of memory technology, particularly in resistive random access memory (ReRAM) devices. With a total of 12 patents to his name, Chao's work has been instrumental in advancing the capabilities of memory storage solutions.

Latest Patents

Chao's latest patents include a manufacturing method for resistive random access memory devices. This method outlines several steps, including the formation of bottom electrodes, a resistance switching layer, and a first insulating material layer. The process also involves patterning the insulating material to create insulating patterns and forming a channel layer with multiple channel regions. Additionally, he has developed a resistive random access memory that features a bottom electrode, a metal oxide layer with conductive filament regions, and corresponding top electrodes. Each conductive filament region is designed with a unique structure that enhances memory performance.

Career Highlights

Chao is currently employed at Winbond Electronics Corporation, where he continues to innovate in the field of memory technology. His work has not only contributed to the company's success but has also positioned him as a key figure in the industry. His expertise in manufacturing methods and memory device architecture has garnered attention and respect from peers and industry leaders alike.

Collaborations

Chao has collaborated with notable coworkers, including Ping-Kun Wang and Chia-Wen Cheng. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

He-Hsuan Chao's contributions to resistive random access memory technology highlight his role as a leading inventor in the field. His innovative patents and collaborative efforts continue to shape the future of memory storage solutions.

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