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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11024802 B1

PDFFull Text
Date of Patent:
Jun. 01, 2021

Filed:

Nov. 14, 2019

Method of fabricating resistive memory

Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Po-Yen Hsu, Taichung, TW;

Ting-Ying Shen, Taichung, TW;

Chia-Hua Ho, Taichung, TW;

Chih-Cheng Fu, Taichung, TW;

Frederick Chen, Taichung, TW;

Assignee:

Winbond Electronics Corp., Taichung, TW;

Attorney:

JCIPRNET

Primary Examiner:

Shih Tsun A Chou

Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/146 (2013.01); H01L 45/08 (2013.01); H01L 45/12 (2013.01); H01L 45/124 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/16 (2013.01); H01L 45/1675 (2013.01); H01L 45/1683 (2013.01);
Abstract

Provided is a method of fabricating a resistive memory including forming a first electrode and a second electrode opposite to each other; forming a variable resistance layer between the first electrode and the second electrode; forming an oxygen exchange layer between the variable resistance layer and the second electrode; and forming a protection layer at least covering sidewalls of the oxygen exchange layer.

Find Patent Forward Citations

Hsu, Po-Yen. (2021). Method of fabricating resistive memory (U.S. Patent No. 11024802). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11024802

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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