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Kaohsiung, Taiwan

Cheng-Hsien Hsieh

This inventor holds 53 USPTO granted patents and 15 published patent applications, primarily in Semiconductor Packaging. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cheng-Hsien Hsieh. Retrieved from https://idiyas.com/inventor/cheng-hsien-hsieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 53 

% Patents Active = 94.3

Average Co-Inventor Count = 5.8

ph-index = 10

Forward Citations = 1,294(Granted Patents)

Forward Citations (Not Self Cited) = 1,124(Dec 10, 2025)


Location History:

  • Hsin-Chu, TW (2016 - 2018)
  • Kaohsiung, TW (2016 - 2024)

Company Filing History:

goldMedal51 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal2 out of 481 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2016-2026

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Areas of Expertise:
Semiconductor Package
3D Packages
Redistribution Layers
Integrated Circuit
Conductive Vias
Dummy Metal
Padding Layer
Surface Mount Device
InFO Package
Chip Stack
Manufacturing Method
Bonding Device
53 patents (USPTO):Explore Patents
1. 12721220 - Methods of forming packages and resulting structures (2026-08-25),
2. 12721173 - Seal rings in integrated circuit package and method (2026-08-25),
3. 12506087 - Semiconductor package with redistribution structure and manufacturing method thereof (2025-12-23),
4. 12322726 - Method of forming an integrated circuit package having a padding layer on a carrier (2025-06-03),
5. 12191224 - Semiconductor package and manufacturing method thereof (2025-01-07),
6. 11955439 - Semiconductor package with redistribution structure and manufacturing method thereof (2024-04-09),
7. 11855018 - Semiconductor device and method of manufacture (2023-12-26),
8. 11830745 - 3D packages and methods for forming the same (2023-11-28),
9. 11652063 - Semiconductor package and method of forming the same (2023-05-16),
10. 11612057 - Opening in the pad for bonding integrated passive device in InFO package (2023-03-21),
11. 11581268 - Semiconductor package with redistribution structure and manufacturing method thereof (2023-02-14),
12. 11515229 - Semiconductor package and manufacturing method thereof (2022-11-29),
13. 11508695 - Redistribution layers in semiconductor packages and methods of forming same (2022-11-22),
14. 11470720 - Opening in the pad for bonding integrated passive device in InFO package (2022-10-11),
15. 11195802 - Semiconductor package including shielding plate in redistribution structure, semiconductor package including conductive via in redistribution structure, and manufacturing method thereof (2021-12-07),

Title: The Innovative Journey of Cheng-Hsien Hsieh

Introduction: Cheng-Hsien Hsieh, a talented inventor hailing from Kaohsiung, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Cheng-Hsien Hsieh holds several patents in the areas of electronics and telecommunications, with his most recent patent focusing on a cutting-edge communication device that revolutionizes the way we connect with the world.

Career Highlights: Throughout his illustrious career, Cheng-Hsien Hsieh has been recognized for his innovative spirit and dedication to pushing the boundaries of technology. His inventions have not only improved the lives of many but have also paved the way for future advancements in the industry.

Collaborations: Cheng-Hsien Hsieh has collaborated with leading tech companies and research institutions to further develop his inventions and bring them to the market. His ability to work effectively in a team setting has led to successful partnerships and groundbreaking innovations.

Conclusion: Cheng-Hsien Hsieh's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor. His contributions to the world of technology continue to inspire and shape the future of the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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