The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Jun. 10, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Cheng-Hsien Hsieh, Kaohsiung, TW;

Li-Han Hsu, Hsinchu, TW;

Wei-Cheng Wu, Hsinchu, TW;

Hsien-Wei Chen, Hsinchu, TW;

Der-Chyang Yeh, Hsinchu, TW;

Chi-Hsi Wu, Hsinchu, TW;

Chen-Hua Yu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 23/31 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 25/10 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5386 (2013.01); H01L 21/486 (2013.01); H01L 21/565 (2013.01); H01L 23/3114 (2013.01); H01L 23/5389 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 21/4857 (2013.01); H01L 21/568 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/19 (2013.01); H01L 2224/24137 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/92244 (2013.01); H01L 2224/97 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/181 (2013.01);
Abstract

An embodiment device includes an integrated circuit die and a first metallization pattern over the integrated circuit die. The first metallization pattern includes a first dummy pattern having a first hole extending through a first conductive region. The device further includes a second metallization pattern over the first metallization pattern. The second metallization pattern includes a second dummy pattern having a second hole extending through a second conductive region. The second hole is arranged projectively overlapping a portion of the first hole and a portion of the first conductive region.


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