The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Nov. 06, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wei-Chih Lai, Hsinchu, TW;

Chien-Chia Chiu, Taoyuan, TW;

Chen-Hua Yu, Hsinchu, TW;

Der-Chyang Yeh, Hsin-Chu, TW;

Cheng-Hsien Hsieh, Kaohsiung, TW;

Li-Han Hsu, Hsin-Chu, TW;

Tsung-Shu Lin, New Taipei, TW;

Wei-Cheng Wu, Hsinchu, TW;

Yu-Chen Hsu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 21/52 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/3675 (2013.01); H01L 21/52 (2013.01); H01L 21/563 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/5383 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01);
Abstract

A semiconductor package includes a circuit substrate, a die, a frame structure, and a heat sink lid. The die is disposed on the circuit substrate and electrically connected with the circuit substrate. The die includes two first dies disposed side by side and separate from each other with a gap between two facing sidewalls of the two first dies. The frame structure is disposed on the circuit substrate and surrounding the die. The heat sink lid is disposed on the die and the frame structure. The head sink lid has a slit that penetrates through the heat sink lid in a thickness direction and exposes the gap between the two facing sidewalls of the two first dies.


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