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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11855018 B1

PDFFull Text
Date of Patent:
Dec. 26, 2023

Filed:

Nov. 09, 2020

Semiconductor device and method of manufacture

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Cheng-Hsien Hsieh, Kaohsiung, TW;

Hsien-Wei Chen, Hsinchu, TW;

Chen-Hua Yu, Hsinchu, TW;

Tsung-Shu Lin, New Taipei, TW;

Wei-Cheng Wu, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Christopher A Johnson

Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/10 (2006.01); H01L 25/00 (2006.01); H01L 21/56 (2006.01); H01L 23/48 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 21/56 (2013.01); H01L 23/481 (2013.01); H01L 24/03 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/19 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 23/562 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/92244 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/35121 (2013.01);
Abstract

A redistribution layer with a landing pad is formed over a substrate with one or more mesh holes extending through the landing pad. The mesh holes may be arranged in a circular shape, and a passivation layer may be formed over the landing pad and the mesh holes. An opening is formed through the passivation layer and an underbump metallization is formed in contact with an exposed portion of the landing pad and extends over the mesh holes. By utilizing the mesh holes, sidewall delamination and peeling that might otherwise occur may be reduced or eliminated.

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