Cheng H Huang

Title: Cheng H Huang: Innovator in Semiconductor Technology

Introduction

Cheng H Huang is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His innovative approaches have advanced the development of MOSFET devices and field oxide isolation techniques.

Latest Patents

One of his latest patents is titled "Field oxidation by implanted oxygen (FIMOX)." This method describes the formation of a field oxide isolation region by creating a masking layer over a silicon substrate. The masking layer is patterned to form an opening for the field oxide isolation region, allowing for the implantation of a conductivity-imparting dopant and oxygen through multiple steps. The field oxide isolation region is then formed by annealing in a non-oxygen ambient or in oxygen, simultaneously creating a gate oxide.

Another notable patent is the "Method to eliminate polycide peeling." This invention focuses on improving the adhesion of metal silicide to polysilicon in MOSFET devices. By creating a wavy or undulated surface on the polysilicon, the rate of adhesion loss or peeling of the metal silicide is significantly reduced. This is achieved through specific deposition conditions or treatments with phosphoric acid or hydrofluoric acid.

Career Highlights

Cheng H Huang is currently employed at United Microelectronics Corporation, where he continues to innovate in semiconductor technologies. His work has been instrumental in enhancing the performance and reliability of MOSFET devices.

Collaborations

Cheng has collaborated with notable colleagues, including Water Lur and Gary Y Hong, contributing to advancements in their shared field of expertise.

Conclusion

Cheng H Huang's contributions to semiconductor technology through his patents and innovative methods have made a lasting impact on the industry. His work continues to influence the development of advanced electronic devices.