The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1995
Filed:
Jan. 13, 1994
Gary Hong, Hsin Chu, TW;
Cheng H Huang, Hsin Chu, TW;
Ming-Tzong Yang, Hsin Chu, TW;
Hong-Tsz Pan, Chang-hua, TW;
United Microelectronics Corporation, Hsinchu, TW;
Abstract
A new method of forming a contact opening by using a sacrificial spin-on-glass layer is described. A semiconductor substrate is provided wherein the surface of the substrate has an uneven topography. A glasseous layer is deposited over the uneven surface of the substrate and reflowed at low temperature whereby the glasseous layer will have a trench shaped surface over the planned contact opening area. The glasseous layer is covered with a spin-on-glass layer wherein the spin-on-glass planarizes the surface of the substrate. The spin-on-glass layer is baked and then covered with a uniform thickness layer of photoresist. The photoresist layer is exposed and developed to form the desired photoresist mask for the contact opening. The exposed spin-on-glass and glasseous layers are etched away to provide the contact opening to the semiconductor substrate. The photoresist layer is stripped and the sacrificial spin-on-glass layer is removed to complete the formation of the contact opening in the manufacture of the integrated circuit.