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For the Inventor, By the Inventor

Zhubei, Taiwan

Chen-Han Wang

This inventor holds 26 USPTO granted patents and 7 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chen-Han Wang. Retrieved from https://idiyas.com/inventor/chen-han-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 

% Patents Active = 96.2

Average Co-Inventor Count = 3.7

ph-index = 2

Forward Citations = 14(Granted Patents)


Location History:

  • Hsinchu County, TW (2022 - 2023)
  • Zhubei, TW (2016 - 2024)

Company Filing History:

goldMedal26 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2016-2026

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Areas of Expertise:
Thermal Budget Dielectric
Silicide Layers
Bilayer Seal Material
Tunable Low-K
Air Spacers
Epitaxial Structures
In-line Testing
Gate Structures
Interconnects
Spacer Structures
Device Estimation
Resist-Protection-Oxide
26 patents (USPTO):Explore Patents
1. 12532716 - Low thermal budget dielectric for semiconductor devices (2026-01-20),
2. 12501687 - Dual silicide layers in semiconductor devices (2025-12-16),
3. 12412779 - Bilayer seal material for air gaps in semiconductor devices (2025-09-09),
4. 12376321 - Semiconductor device with silicide structures surrounding epitaxial structures and method of making the same (2025-07-29),
5. 12369388 - Semiconductor devices with tunable low-K inner air spacers (2025-07-22),
6. 12363980 - Spacer structure for semiconductor device (2025-07-15),
7. 12360153 - In-line device electrical property estimating method and test structure of the same (2025-07-15),
8. 12119404 - Gate all around structure with additional silicon layer and method for forming the same (2024-10-15),
9. 12094952 - Air spacer formation with a spin-on dielectric material (2024-09-17),
10. 11942358 - Low thermal budget dielectric for semiconductor devices (2024-03-26),
11. 11901220 - Bilayer seal material for air gaps in semiconductor devices (2024-02-13),
12. 11848238 - Methods for manufacturing semiconductor devices with tunable low-k inner air spacers (2023-12-19),
13. 11735666 - Gate all around structure with additional silicon layer and method for forming the same (2023-08-22),
14. 11688766 - Seal material for air gaps in semiconductor devices (2023-06-27),
15. 11637062 - Interconnect structure and method for manufacturing the interconnect structure (2023-04-25),

Title: Innovations by Chen-Han Wang: Pioneering Semiconductor Technologies

Introduction

Chen-Han Wang, a prominent inventor located in Zhubei, Taiwan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 19 patents, Wang's work is characterized by innovative methods for manufacturing advanced semiconductor structures that enhance performance and efficiency.

Latest Patents

Among his latest patents is a revolutionary design titled "Gate all around structure with additional silicon layer and method for forming the same." This patent encompasses methods for creating a semiconductor structure by alternately stacking various semiconductor material layers over a substrate. The process includes patterning these layers to establish fin structures and forming insulating layers to optimize the device's functionality.

Additionally, Wang has developed a patent for "Air spacer formation with a spin-on dielectric material." This method details the creation of an intermediate spacer structure that incorporates innovative materials to ensure enhanced performance of semiconductor devices by forming air gaps and sealing them with dielectric layers.

Career Highlights

Chen-Han Wang works with Taiwan Semiconductor Manufacturing Company Ltd., a leader in the semiconductor manufacturing industry. His innovative work in semiconductor technology is crucial to advancing the capabilities of modern electronics, enabling faster and more efficient devices.

Collaborations

Wang collaborates with skilled coworkers such as Keng-Chu Lin and Chun-Hsiung Lin, who contribute to the innovative research and development environment within their team. Working alongside such talented individuals fosters a collaborative atmosphere that drives advancements in semiconductor technology.

Conclusion

In conclusion, Chen-Han Wang’s contributions to semiconductor innovation through his patents showcase his expertise and dedication to enhancing technology. His work not only reflects his personal commitment to advancing the field, but it also exemplifies the collaborative spirit within the industry, showing how teamwork leads to groundbreaking advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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