The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Mar. 12, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Mrunal Abhijith Khaderbad, Hsinchu, TW;
Ko-Feng Chen, Hsinchu, TW;
Zheng-Yong Liang, Hsinchu, TW;
Chen-Han Wang, Zhubei, TW;
De-Yang Chiou, Hsinchu, TW;
Yu-Yun Peng, Hsinchu, TW;
Keng-Chu Lin, Ping-Tung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures with an opening in between, filling the opening with a flowable isolation material, treating the flowable isolation material with a plasma, and removing a portion of the plasma-treated flowable isolation material between the first and second fin structures.