This inventor holds 4 USPTO granted patents and 4 published patent applications. Top assignee: Nan Ya Technology Corporation. Active years: 2023-2024.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2023-2024
Title: Biography of Inventor Che-Hsien Liao
Introduction
Che-Hsien Liao is a prominent inventor based in New Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His innovative work focuses on methods for fabricating conductive layers and semiconductor devices.
Latest Patents
Liao's latest patents include a method for fabricating a conductive layer stack and a method for fabricating a semiconductor device with a gate contact. The first patent discloses a method that involves forming an intervening layer on an under-layer, with the filler layer comprising tungsten. The intervening layer consists of tungsten silicide and has a thickness greater than 4.1 nm, while the under-layer is made of titanium nitride with a columnar grain structure. The second patent details a conductive layer stack and semiconductor device, emphasizing the same materials and structural characteristics.
Career Highlights
Che-Hsien Liao is currently employed at Nan Ya Technology Corporation, where he continues to advance his research and development efforts in semiconductor technology. His work has been instrumental in enhancing the performance and reliability of semiconductor devices.
Collaborations
Throughout his career, Liao has collaborated with notable colleagues, including Yueh Hsu and Yu-Chang Chang. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile