The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Jan. 12, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Che-Hsien Liao, New Taipei, TW;
Yueh Hsu, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76846 (2013.01); H01L 21/76871 (2013.01); H01L 21/76889 (2013.01); H01L 23/5283 (2013.01); H01L 23/53266 (2013.01);
Abstract
The present application discloses a method for fabricating a conductive layer stack. The method includes forming an intervening layer on an under-layer; and forming a filler layer on the intervening layer, wherein the filler layer comprises tungsten. The intervening layer comprises tungsten silicide and a thickness of the intervening layer is greater than 4.1 nm. The under-layer comprises titanium nitride and comprises a columnar grain structure.
Liao, Che-Hsien. (2024). Method for fabricating conductive layer stack and method for fabricating semiconductor device with gate contact (U.S. Patent No. 12014955). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12014955
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile