The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2024

Filed:

Jan. 12, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Che-Hsien Liao, New Taipei, TW;

Yueh Hsu, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53266 (2013.01); H01L 21/76846 (2013.01); H01L 21/76871 (2013.01); H01L 21/76889 (2013.01); H01L 23/5283 (2013.01);
Abstract

The present application discloses a conductive layer stack, a semiconductor device and methods for fabricating the conductive layer stack and the semiconductor device. The conductive layer stack includes an intervening layer comprising tungsten silicide and positioned on an under-layer; a filler layer comprising tungsten and positioned on the intervening layer. The under-layer comprises titanium nitride and comprises a columnar grain structure. A thickness of the intervening layer is greater than about 4.1 nm.


Find Patent Forward Citations

Liao, Che-Hsien. (2024). Conductive layer stack and semiconductor device with a gate contact (U.S. Patent No. 11876051). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11876051

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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