The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2023

Filed:

Jan. 19, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Che-Hsien Liao, New Taipei, TW;

Yu-Chang Chang, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/76861 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01); H01L 21/76876 (2013.01); H10B 12/488 (2023.02);
Abstract

The present application discloses method for fabricating a conductive feature and a method for fabricating a semiconductor device. The method includes providing a substrate; forming a recess in the substrate; conformally forming a first nucleation layer in the recess; performing a post-treatment to the first nucleation layer; and forming a first bulk layer on the first nucleation layer to fill the recess. The first nucleation layer and the first bulk layer configure the conductive feature. The first nucleation layer and the first bulk layer include tungsten. The post-treatment includes a borane-containing reducing agent.


Find Patent Forward Citations

Liao, Che-Hsien. (2023). Method for fabricating conductive feature and semiconductor device (U.S. Patent No. 11842925). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11842925

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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