The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Jan. 19, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Che-Hsien Liao, New Taipei, TW;

Yu-Chang Chang, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/76856 (2013.01); H01L 21/76843 (2013.01); H01L 21/76871 (2013.01); H10B 12/488 (2023.02);
Abstract

The present application discloses method for fabricating a semiconductor device. The method includes providing a substrate; forming a word line trench in the substrate; conformally forming a first insulating layer in the word line trench and conformity forming a first barrier layer on the first insulating layer; conformally forming a first nucleation layer on the first barrier layer; performing a post-treatment to the first nucleation layer, wherein the post-treatment comprises a reducing agent comprising diborane and a tungsten-containing precursor; forming a first bulk layer on the first nucleation layer, wherein the first nucleation layer and the first bulk layer configure a first conductive layer; and performing a planarization process to turn the first insulating layer, the first barrier layer, and the first conductive layer into a word line insulating layer, a word line barrier layer, and a word line conductive layer, respectively and correspondingly.


Find Patent Forward Citations

Liao, Che-Hsien. (2023). Method for fabricating semiconductor device (U.S. Patent No. 11676861). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11676861

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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