Chao Feng Yeh

Title: Innovations by Chao Feng Yeh: Pioneering Vertical Field Effect Transistors

Introduction

Chao Feng Yeh, an accomplished inventor based in Yokkaichi, Japan, has made significant contributions to the field of semiconductor technology. With a portfolio of seven patents, Yeh has been at the forefront of innovation, particularly in the design and production of vertical field effect transistors. His work has not only advanced semiconductor devices but has also paved the way for new manufacturing techniques in the industry.

Latest Patents

Among his latest patents, one stands out: "Surround gate vertical field effect transistors including tubular and strip electrodes and method of making the same." This invention describes a sophisticated method of forming a stack that includes doped semiconductor strips, coupled with a one-dimensional array of gate electrode strips and a dielectric matrix layer over a substrate. Yeh’s innovative design also involves the creation of a two-dimensional array of tubular gate electrode portions, facilitating the formation of vertical semiconductor channels within gate dielectrics.

Another notable patent is "Vertical transistors with sidewall gate air gaps and methods therefor." This patent introduces a method that involves the formation of vertically-oriented transistors with strategically placed sidewall gates and an air gap chamber, optimizing performance and efficiency. Both patents reflect Yeh's expertise in advancing vertical transistor technology and semiconductor fabrication methods.

Career Highlights

Yeh has worked with prominent companies such as SanDisk Technologies Inc. and SanDisk 3D LLC. His tenure at these organizations has allowed him to leverage his skills and creativity to develop groundbreaking technologies that enhance electronic circuitry and device performance. His ability to innovate within these companies has solidified his reputation as a leading figure in semiconductor inventions.

Collaborations

Throughout his career, Chao Feng Yeh has collaborated with talented peers, including notable individuals like Hiroaki Iuchi and Hitomi Fujimoto. These partnerships have fostered a dynamic exchange of ideas and expertise, further contributing to the advancement of semiconductor innovations and applications.

Conclusion

Chao Feng Yeh exemplifies the spirit of innovation in the semiconductor field. With his impressive array of patents and collaborations, he continues to influence the design and fabrication of modern electronic devices. His advancements, especially in vertical field effect transistors, represent a significant leap forward in technology, showcasing his dedication to excellence and innovation.