Hsinchu, Taiwan

Chang-Ting Chen

USPTO Granted Patents = 11 

 

Average Co-Inventor Count = 2.1

ph-index = 2

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 2005-2017

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11 patents (USPTO):Explore Patents

Title: Innovations of Chang-Ting Chen

Introduction

Chang-Ting Chen is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory devices, holding a total of 11 patents. His work focuses on enhancing the efficiency and functionality of memory technology.

Latest Patents

One of his latest patents is titled "Devices and operation methods for configuring data strobe signal in memory device." This invention describes a non-volatile memory device that includes a memory core for storing data, an input buffer for receiving an external clock signal, and a synchronization circuit that ensures the output clock signal is synchronized with the external clock signal. Additionally, it features a data strobe output buffer that provides a configurable data strobe signal relative to the external clock signal. Another notable patent is the "Configurable clock interface device," which allows an integrated circuit to utilize both external multiple phase clocks and single phase clocks to generate an internal clock signal compatible with the integrated circuit.

Career Highlights

Chang-Ting Chen is currently employed at Macronix International Co., Ltd., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and reliable.

Collaborations

Throughout his career, Chang-Ting Chen has collaborated with notable colleagues, including Kuen-Long Chang and Ken-Hui Chen. These collaborations have contributed to the development of cutting-edge technologies in the memory sector.

Conclusion

Chang-Ting Chen's contributions to memory technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative work continues to shape the future of memory devices.

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