The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2008
Filed:
Dec. 27, 2006
Chang-ting Chen, Hsinchu, TW;
Chung-kuang Chen, Taipei, TW;
Chang-Ting Chen, Hsinchu, TW;
Chung-Kuang Chen, Taipei, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method for accessing a memory sequentially. The memory has (m+1) bit lines and at least one row of transistors, wherein m is a positive integer. This method includes the following steps. First, voltage levels of first and second terminals of the transistors are equalized to a ground voltage in a pre-discharge period. Next, the voltage levels of the first and second terminals of the ntransistor are respectively transformed into a source voltage and a drain voltage in an nreading period, and the voltage level of the second terminal of the (n+1)transistor is transformed into an isolation voltage, wherein n is a positive integer smaller than m. Thereafter, the voltage levels of the first and second terminals of the mtransistor are respectively transformed into the source voltage and the drain voltage in an mreading period. The source voltage equals the ground voltage.