The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Dec. 20, 2006
Chang-ting Chen, Hsinchu, TW;
Chun-jen Huang, Tainan, TW;
Chang-Ting Chen, Hsinchu, TW;
Chun-Jen Huang, Tainan, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method for improving an over erasing effect of a charge-trapping memory cell. The charge-trapping memory cell has a transistor, which has a first terminal coupled to a first bit line and a second terminal coupled to a second bit line. First, the method erases the charge-trapping memory cell. Then, after the charge-trapping memory cell is completely erased, the first bit line is electrically connected to the second bit line to make a voltage level of the first bit line equal a voltage level of the second bit line such that the voltage level of the first terminal of the transistor equals the voltage level of the second terminal of the transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile