San Jose, CA, United States of America

Chang-Lin Hsieh

USPTO Granted Patents = 10 

Average Co-Inventor Count = 4.6

ph-index = 7

Forward Citations = 445(Granted Patents)


Location History:

  • Sunnyvale, CA (US) (2000)
  • San Jose, CA (US) (2003 - 2012)

Company Filing History:


Years Active: 2000-2012

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10 patents (USPTO):

Title: Chang-Lin Hsieh: Innovator in Plasma Etching Technologies

Introduction

Chang-Lin Hsieh is a prominent inventor based in San Jose, CA (US). He has made significant contributions to the field of plasma etching, particularly in the development of methods for etching carbonaceous layers and organic low-k dielectric materials. With a total of 10 patents to his name, Hsieh's work has had a substantial impact on semiconductor manufacturing processes.

Latest Patents

Hsieh's latest patents include innovative techniques for plasma etching. One notable patent focuses on the etching of carbonaceous layers using sulfur-based etchants. This method employs a high RF frequency source to achieve a high etch rate while maintaining selectivity to inorganic dielectric layers. The etchant gas mixture primarily consists of COS and molecular oxygen, with the potential inclusion of additional gases such as nitrogen, carbon monoxide, or carbon dioxide.

Another significant patent details a method for etching organic low-k dielectric materials. This process involves placing a substrate with exposed organic low-k dielectric material in an etch reactor. A process gas containing oxygen, nitrogen, and methane is supplied, and a plasma is formed to effectively etch the organic low-k dielectric material. This method is applicable to various polymer-based low-k dielectric materials, photoresists, and organic polymers.

Career Highlights

Throughout his career, Chang-Lin Hsieh has worked with leading companies in the semiconductor industry, including Applied Materials, Inc. His expertise in plasma etching technologies has positioned him as a key figure in advancing manufacturing techniques.

Collaborations

Hsieh has collaborated with notable professionals in his field, including Yan Ye and Diana Xiaobing Ma. These collaborations have contributed to the development of innovative solutions in plasma etching.

Conclusion

Chang-Lin Hsieh's contributions to plasma etching technologies have significantly advanced the semiconductor industry. His innovative patents and collaborations reflect his commitment to enhancing manufacturing processes.

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